THERMAL QUENCHING, INFRARED QUENCHING AND SUPRALINEARITY IN a-Si:H

We have tested the temperature and incident flux dependence of photoconductivity and dual beam infrared photoconductivity spectra of a-Si:H samples in annealed states A* and A, and the light soaked states B1 and B2; and observed that they were different for the 4 different states. We believe that light exposures create two kinds of centers, which we name α and τ. A model is suggested to explain the experimental results.