THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE
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Abstract
Investigations on the nature and states of the defects in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy, electron microscopy, electron microanalysis and spread resistance. Phosphorus profile in these wafers was measured. And the effect of phosphorus on defects and resistivity was determined.
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MA Zhenhong, DAI Daoyang, ZHOU Shiren, YE Yizheng, YE Shuichi. THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE[J]. Chin. Phys. Lett., 1986, 3(3): 113-116.
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MA Zhenhong, DAI Daoyang, ZHOU Shiren, YE Yizheng, YE Shuichi. THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE[J]. Chin. Phys. Lett., 1986, 3(3): 113-116.
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MA Zhenhong, DAI Daoyang, ZHOU Shiren, YE Yizheng, YE Shuichi. THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE[J]. Chin. Phys. Lett., 1986, 3(3): 113-116.
|
MA Zhenhong, DAI Daoyang, ZHOU Shiren, YE Yizheng, YE Shuichi. THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE[J]. Chin. Phys. Lett., 1986, 3(3): 113-116.
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