Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2H6 as a Boron Source

  • Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapor deposition using B2H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high purity magnesium bulk at 890°C in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented. The films exhibit a zero-resistance transition of about 38 K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 x 107A/cm2 at 10 K in zero field.
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