Characteristics of Shallow Electron Traps in Cubic AgCl Microcrystals Doped with K₄Fe(CN)₆

A model is proposed to describe the photoelectron decay process at room temperature in cubic AgCl microcrystals homogeneously doped with K₄Fe(CN)₆. By combining calculation of the kinetic equations resulted from the model with a microwave absorption dielectric-spectrum measuring technique, the capture cross-section and the trap depth of shallow electron traps induced by Fe(CN)₆^4- at room temperature are obtained, which are 3.560 x 10^-17cm² and 0.115 eV, respectively. Based on the two parameters, the optimal doping amount of K₄Fe(CN)₆ is easily gained to be 2 ppm by computer calculation.