Deposition of Er:Al₂O₃ Films and Photoluminescence Characteristics

Er³⁺-doped Al₂O₃ films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sputtering. The process parameters, such as target bias voltage, substrate bias voltage, O₂ gas flows, sputtering gas pressure, were studied. The 1.53μm photoluminescence characteristics from Er³⁺ were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.