Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber
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ZHANG Qiu-Lin,
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FENG Bao-Hua,
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ZHANG Dong-Xiang,
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FU Pan-Ming,
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ZHANG Zhi-Guo,
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ZHAO Zhi-Wei,
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DENG Pei-Zhen,
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XU Jun,
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XU Xiao-Dong,
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WANG Yong-Gang,
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MA Xiao-Yu
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Abstract
A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.
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