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Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

  • 1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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  • Published Date: September 30, 2003
    Abstract
  • A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.
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