Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy
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Abstract
Effects of hydrostatic pressure on the mixed-valence (MV) bismuth complex BaBiO3 have been investigated up to ~9 GPa by means of high-pressure Raman scattering and absorption spectra at 300 K. The pressure-induced hardening behaviour of the Bi-O stretching mode suggests that the predicted pressure-induced MV to the single-valence (SV) phase change cannot occur. Investigation of absorption spectra with pressure shows the enhanced optical gap Egap, which further indicates the remained MV state of Bi ions.
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LIU Xiao-Jun, MORITOMO Yutaka. Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy[J]. Chin. Phys. Lett., 2003, 20(11): 2027-2029.
LIU Xiao-Jun, MORITOMO Yutaka. Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy[J]. Chin. Phys. Lett., 2003, 20(11): 2027-2029.
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LIU Xiao-Jun, MORITOMO Yutaka. Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy[J]. Chin. Phys. Lett., 2003, 20(11): 2027-2029.
LIU Xiao-Jun, MORITOMO Yutaka. Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy[J]. Chin. Phys. Lett., 2003, 20(11): 2027-2029.
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