Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation
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YU Ke,
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WANG Wei-Ming,
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ZHU Zi-Qiang,
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ZHANG Yong-Sheng,
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YU Xian-Wen,
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CHEN Shao-Qiang,
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LI Qiong,
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YANG Guang-Da,
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ZHU Jian-Zhong,
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CHEN Qun,
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LU Wei,
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ZI Jian
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Abstract
Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.
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