Dynamic Localization Condition of Two Electrons in a Strong dc-ac Biased Quantum Dot Molecule
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Abstract
We present a perturbation investigation of dynamic localization condition of two electrons in a strong dc-ac biased quantum dot molecule. By reducing the system to an Hubbard-type effective two-site model and by applying Floquet theory, we find that the dynamical localization phenomenon occurs under certain values of the large strength of the dc and ac field. This demonstrates the possibility of using appropriate dc-as fields to manipulate dynamical localized states in mesoscopic devices, which is an essential component of practical schemes for quantum information processing. Our conclusion is instructive to the field of quantum function devices.
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WANG Li-Min, DUAN Su-Qing, ZHAO Xian-Geng, LIU Cheng-Shi. Dynamic Localization Condition of Two Electrons in a Strong dc-ac Biased Quantum Dot Molecule[J]. Chin. Phys. Lett., 2004, 21(2): 370-373.
WANG Li-Min, DUAN Su-Qing, ZHAO Xian-Geng, LIU Cheng-Shi. Dynamic Localization Condition of Two Electrons in a Strong dc-ac Biased Quantum Dot Molecule[J]. Chin. Phys. Lett., 2004, 21(2): 370-373.
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WANG Li-Min, DUAN Su-Qing, ZHAO Xian-Geng, LIU Cheng-Shi. Dynamic Localization Condition of Two Electrons in a Strong dc-ac Biased Quantum Dot Molecule[J]. Chin. Phys. Lett., 2004, 21(2): 370-373.
WANG Li-Min, DUAN Su-Qing, ZHAO Xian-Geng, LIU Cheng-Shi. Dynamic Localization Condition of Two Electrons in a Strong dc-ac Biased Quantum Dot Molecule[J]. Chin. Phys. Lett., 2004, 21(2): 370-373.
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