Multiple Non-exponential Decay of Photo-induced Excess Electrons in Heterostructures

The derivative -dN(t)/dlgt of photo-induced excess electrons N(t) in GaAs-Al_0.3 Ga_0.7As and In_0.15Ga_0.85As-Al_0.2Ga_0.8As heterostructures with respect to 1gt shows a spectrum with pronounced peak-structure. The apparent capture energies, the lifetime prefactors, the apparent lifetime distribution, and the derivative decay quantities of individual lifetimes were analyzed to distinguish capture mechanisms.