Partial Disordering of GaAs/AlGaAs Quantum Well by Rapid Thermal Annealing

The partial disordering of GaAs/AlGaAs quantum well (QW) material has been obtained by rapid thermal annealing with SO₂ dielectric capping film. In this case, the absorption edge of QW material was shifted apparently. A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.