Optical and Electric and Structural Properties of Til-xAIxN Thin Films
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Abstract
A sequence of Til-xAIxN films has been prepared by rf reactive magnetron sputtering. The optical and electric properties versus aluminum content x have been studied. Values suitable for magneto-optic protective layers have been achieved in Til-xAIx N thin films with aluminum content x > 0.75. X-ray diffraction results show that Til-xAIx N thin films in this study are a bcc structure up to x = 0.75, further increase in the aluminum content gives a wurtzite structure. All of the results show that the optical and electric properties of Til-xAIx N films might be related to the crystal structure.
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