Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition
-
Abstract
An electron cyclotron resonance assisted plasma with N2 being the plasma source gas was employed to deposit hexagonal GaN on (0001) surface of α-Al2O3 substrate. By special gas distributor, trimethgallium was introduced into reactant zone. A 10 ×10mm uniform GaN film was gained with relatively low deposition temperature, 560°C, and high growth rate of 1.4μm/h. A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin.
Article Text
-
-
-
About This Article