Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride

Institute of Solid State Physics, Academia Sinica, Eefei 230031^*Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026

Published Date: October 31, 1993

Abstract

An anomalous dielectric behavior in nanometer-sized amorphous silicon nitride is reported. The dielectric constant of nanometer-sized amorphous silicon nitride has strong dependence on frequency at room temperature (RT), which is completely different from the conventional coarse-grain silicon nitride. The maximum of the dielectric constant of nanometer-sized amorphous silicon nitride-at RT is about 40 times larger than that of the conventional silicon nitride. The anomalous dielectric behavior is explained by a kind of mechanism of polarization, that is, interfacial polarization.