C-axis Oriented AIN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of AI Combined with Post-Nitridation

A new technique for the preparation of AlN thin films by ultrahigh vacuum electron beam evaporation of AI followed by nitridation is reported and by using this method c-axis oriented AJN thin films have been success-fully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and cross-sectional transmission electron microscope were employed to characterize AIN films. Temperature of nitridation was found to play an important role in the formation of AIN film. By post-nitridation of as-deposited film at 1000°C for lh in N₂, the crystalline AlN film with (002) orientation has been obtained.