ROLE OF ALTER LAYER IN DEPTH PROFILE OF INTERFACE

A new model based on the alter layer induced by ion bombardment has been proposed, which can explain the depth profile of interface of Ta₂O₅/Ta quite well. In contradiction with the generally accepted point of view the depth profile does not follow the shape of the error function. The dcminant factor for resolution is the thickness of the alter layer (δ) rather than the electron mean free path (λ). The Ta₂O₅/Ta sample was prepared by the method of anodic oxidation with thickness of 500Å. All the surface analyses were performed by using scanning Auger micro probe (model PHI-590) at room temperature.