Photoluminescence from Erbium-Implanted Silicon-Rich SiO₂

Si-rich SiO₂ films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 ×10¹⁵cm^-2 400 keV Er ions. After annealing at 800°C for 5 min, the samples show room temperature luminescence around 1.54 μm, characteristic of intra-4f emission from Er³⁺, upon excitation using an Ar ion laser.