Photoluminescence from Erbium-Implanted Silicon-Rich SiO2
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Abstract
Si-rich SiO2 films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 ×1015cm-2 400 keV Er ions. After annealing at 800°C for 5 min, the samples show room temperature luminescence around 1.54 μm, characteristic of intra-4f emission from Er3+, upon excitation using an Ar ion laser.
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