HOT-CARRIER ENERGY-TRANSFER RATE IN GaAs-AlGaAs HETEROSTRUCTURES

Hot-carrier energy-transfer rates in GaAs-AlGaAs single and multiple heterostructures are studied based on a balance-equation approach recently developed. The electron temperature is almost a universal function of the energy-transfer rate per carrier, irrespective of the system geometry, electron density and impurity scattering, and that in the case of optic phonon scattering, the dynamic and high-field effects eliminate most of the screening.