Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells
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Abstract
The binding energy of an exciton bound to an ionized donor impurity (D+, X ) located at the center or the edge in GaAs-AIxGal-xAs quantum wells is calculated variationally for the well width from 10 to 300Å by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.
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