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Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon

  • Department of Physics, Institute of Solid Solid State Physics, Nanjing University, Nanjing 2100931Institute for Materials Research, Tohoku University, Sendai 980, Japan

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  • Published Date: May 31, 1997
    Abstract
  • Electrical activity of Frank partial dislocations bounding stacking faults and the influence of Fe impurities in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current (EBIC) technique. Frank partials free from metallic impurities exhibit EBIC contrast at low temperature but not at room temperature, indicating that they are only accompanied with shallow energy levels in the band gap. The energy level related to a Frank partial is determined to be about Ec-0.08eV in n-type Si. Frank partials decorated by Fe impurities become EBIC active at room temperature.
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