Charge Imprinting Biases Topology of Correlated Insulator in hBN-Aligned Rhombohedral Multilayer Graphene

Rhombohedral multilayer graphene aligned with hexagonal boron nitride (RMG-hBN) hosts correlated Chern phases, but the microscopic role of hBN stacking remains unclear, especially when the active carriers are displaced away from the moiré interface. Using Hartree−Fock calculations over layer numbers, twist angles, displacement fields, fillings, and hBN alignments, we show that correlated insulators are most robust at small twist angles and intermediate layer number (N \simeq 6), where bandwidth suppression is balanced by layer delocalization of the wavefunctions of the active carriers. Under moiré-distant conditions at filling ν = 1, the topology of the insulating state is strongly biased by charge imprinting: the hBN alignment shapes the occupied valence-band charge texture near the interface via moiré potential, which acts through long-range Coulomb interactions as a remote electrostatic template for doped conduction electrons. Depending on the alignment, this template favors either triangular charge localization associated with trivial insulators or honeycomb-like charge networks compatible with Chern insulators. Our results identify valence-band charge textures as a microscopic route by which a remote moiré interface controls correlated topology in multilayer graphene.