A protective fabrication method for K2Cr3As3-based quantum device and its interfering Josephson diode effect
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Zhiyuan Zhang,
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Anqi Wang,
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Zhongchen Xu,
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Xiaofan Shi,
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Xingchen Guo,
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Xiao Deng,
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Zhaozheng Lyu,
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Peiling Li,
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Faming Qu,
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Guangtong Liu,
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Youguo Shi,
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Li Lu,
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Jiangping Hu,
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Ziwei Dou,
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Jie Shen
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Abstract
The extreme environmental sensitivity of the quasi-one-dimensional unconventional superconductor K2Cr3As3 has long hindered the fabrication of quantum devices and the exploration of its superconducting properties. Here, we develop a protective fabrication procedure compatible with conventional electron-beam lithography (EBL) and use it to construct K2Cr3As3-Al superconducting quantum interference devices (SQUIDs). Critical-current oscillations and a Josephson diode effect (JDE) are observed in these devices. Under microwave irradiation, half-integer Shapiro steps emerge near the SQUID interference minimum, providing evidence for the existence of the secondharmonic component in current phase relation (CPR). Besides, JDE can be further enhanced to nearly 100% by microwave irradiation. Considering the potentially significant kinetic inductance associated with K2Cr3As3, we incorporate finite-inductance effects as an extension of the interfering JDE model with zero inductance, which is further supported by quantitative fitting and overdamped RSJ simulations. These results demonstrate high-quality Josephson coupling at the K2Cr3As3-Al interface and establish a microfabrication route for fragile, air-sensitive superconductors, providing a platform for further device-based studies of K2Cr3As3 and for cryo-electronics applications.
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Cite this article:
Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A protective fabrication method for K
2Cr
3As
3-based quantum device and its interfering Josephson diode effectJ.
Chin. Phys. Lett..
DOI: 10.1088/0256-307X/43/8/080711
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Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A protective fabrication method for K2Cr3As3-based quantum device and its interfering Josephson diode effectJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/8/080711
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Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A protective fabrication method for K2Cr3As3-based quantum device and its interfering Josephson diode effectJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/8/080711
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Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A protective fabrication method for K2Cr3As3-based quantum device and its interfering Josephson diode effectJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/8/080711
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