A Protective Fabrication Method for K2Cr3As3-Based Quantum Device and Its Interfering Josephson Diode Effect
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Zhiyuan Zhang,
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Anqi Wang,
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Zhongchen Xu,
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Xiaofan Shi,
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Xingchen Guo,
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Xiao Deng,
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Zhaozheng Lyu,
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Peiling Li,
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Faming Qu,
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Guangtong Liu,
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Youguo Shi,
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Li Lu,
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Jiangping Hu,
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Ziwei Dou,
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Jie Shen
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Abstract
The extreme environmental sensitivity of the quasi-one-dimensional unconventional superconductor K2Cr3As3 has long hindered the fabrication of quantum devices and the exploration of its superconducting properties. Here, we develop a protective fabrication procedure compatible with conventional electron-beam lithography (EBL) and use it to construct K2Cr3As3-Al superconducting quantum interference devices (SQUIDs). Critical-current oscillations and a Josephson diode effect (JDE) are observed in these devices. Under microwave irradiation, half-integer Shapiro steps emerge near the SQUID interference minimum, providing evidence for the existence of the second-harmonic component in current phase relation (CPR). Besides, JDE can be further enhanced to nearly 100% by microwave irradiation. Considering the potentially significant kinetic inductance associated with K2Cr3As3, we incorporate finite-inductance effects as an extension of the interfering JDE model with zero inductance, which is further supported by quantitative fitting and overdamped RSJ simulations. These results demonstrate high-quality Josephson coupling at the K2Cr3As3-Al interface and establish a microfabrication route for fragile, air-sensitive superconductors, providing a platform for further device-based studies of K2Cr3As3 and for cryo-electronics applications.
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Cite this article:
Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A Protective Fabrication Method for K
2Cr
3As
3-Based Quantum Device and Its Interfering Josephson Diode EffectJ.
Chin. Phys. Lett..
DOI: 10.1088/0256-307X/43/8/080711
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Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A Protective Fabrication Method for K2Cr3As3-Based Quantum Device and Its Interfering Josephson Diode EffectJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/8/080711
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Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A Protective Fabrication Method for K2Cr3As3-Based Quantum Device and Its Interfering Josephson Diode EffectJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/8/080711
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Zhiyuan Zhang, Anqi Wang, Zhongchen Xu, Xiaofan Shi, Xingchen Guo, Xiao Deng, Zhaozheng Lyu, Peiling Li, Faming Qu, Guangtong Liu, Youguo Shi, Li Lu, Jiangping Hu, Ziwei Dou, Jie Shen. A Protective Fabrication Method for K2Cr3As3-Based Quantum Device and Its Interfering Josephson Diode EffectJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/8/080711
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