Gate-tunable Strong Spin-Orbit Torque in 2D Weyl Semiconductor Tellurium-based Heterostructures

Two-dimensional tellurium (2D Te) possesses a unique chiral crystal structure and strong spin-orbit coupling (SOC), making it a promising material platform for the study of spin-orbit torque (SOT). In this work, we systematically investigate the gate-tunable electrical transport and SOT efficiency in high-quality 2D Te synthesized via a hydrothermal method. Electrical transport measurements reveal a pronounced gate-tunable negative magnetoresistance (NMR), indicating strong spin-orbit interactions and a characteristic topological band structure in the Te flakes. We further demonstrate that the SOT efficiency in Te/Py heterostructures is comparable to that of conventional heavy metals. Importantly, the SOT efficiency can be effectively modulated by a back-gate voltage, achieving a tunability of up to 15%. This study not only confirms 2D Te as an efficient SOT material, but also offers new pathways toward developing low-power, electrically tunable spintronic devices.