Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory Computing
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Abstract
New electronic devices based on the physical properties of electrically driven skyrmions are promising for logic computing and nonvolatile memory applications. However, achieving efficient and practical compute-storage integration remains challenging owing to the structural complexity, limited functionality, and low flexibility observed in most skyrmion-based devices. In this study, we designed a novel device architecture that integrates seven basic logic gates into a unified physical structure. Their operation can be enabled by physical mechanisms, such as spin-orbit torque, spin-transfer torque, skyrmion-edge repulsions, and skyrmion-skyrmion interactions. Furthermore, by incorporating voltage-controlled magnetic anisotropy, the device achieved multi-input capability and reconfigurability functionality. Ultralow power consumption (<1 fJ/bit per logic function) and extremely high logic density were achieved. Significantly, the compatibility of this nanotrack design with existing skyrmion racetrack memory paves the way for advanced in-memory computing in spintronic architectures.
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Cite this article:
Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ.
Chin. Phys. Lett..
DOI: 10.1088/0256-307X/43/3/030802
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Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/3/030802
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Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/3/030802
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Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/3/030802
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