An Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory Computing
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Abstract
New electronic devices based on the physical properties of electrically driven skyrmions are attractive in logic computing and non-volatile memory. However, achieving efficient and practical compute-storage integration is still challenging due to structural complexity, limited functionality, and low flexibility in most skyrmion-based devices. Herein, we design a novel device architecture that can integrate 7 basic logic gates in a unified physical structure. Their operation can be enabled by physical mechanisms such as spin-orbit torque, spin-transfer torque, skyrmion-edge repulsions, and skyrmion-skyrmion interactions. Furthermore, by incorporating voltage-controlled magnetic anisotropy, the device achieves multi-input capability and reconfigurable functionality. Ultra-low power consumption (<1 fJ/bit per logic function) and extremely high logic density are achieved. Significantly, the compatibility of this nanotrack design with established skyrmion racetrack memory paves the way for the realization of advanced in-memory computing within spintronic architectures.
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Cite this article:
Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. An Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ.
Chin. Phys. Lett..
DOI: 10.1088/0256-307X/43/3/030802
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Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. An Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/3/030802
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Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. An Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/3/030802
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Fuhao Zou, Ziyuan Liu, Zijing Zhao, Muhammad Humayun, Chundong Wang, Xiaolei Wang. An Intelligent Reconfigurable Skyrmion-Based Multi-Port Logic Device for In-Memory ComputingJ. Chin. Phys. Lett.. DOI: 10.1088/0256-307X/43/3/030802
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