Isoelectronic Ga substitution effects on antiferromagnetic order in CeRh(In_1-xGax)₅

In this work, Ga-doped CeRhIn₅ single crystals are grown by In/Ga flux method. Single-crystal X-ray diffraction, magnetic susceptibility, specific heat, and neutron diffraction measurements are utilized to characterize the sample quality and the antiferromagnetic transition temperature T_N. By substituting In with Ga, T_N is slightly decreased, but the antiferromagnetic transition peaks in magnetic susceptibility and specific heat measurements are obviously broadened by external field along c-axis. By comparing with Zn-doped CeRhIn₅, it can be concluded that T_N is dominated by electron density, and the stiffness of antiferromagnetic transition is obviously reduced by Ga substitution. The substitution effects of Ga are possibly caused by forming heterogeneous local structures, which avoids quantum critical point, superconductivity and non-fermi liquid states. Investigations on Ga-doped CeRhIn₅ help to comprehend the chemical substitution effects in CeRhIn₅, and the interaction between heterogeneous structure and long-range antiferromagnetic states.