Ultralow-Vertical-Current Magnetization Switching Effect in an All Van Der Waals 2D Heterostructure
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Abstract
Abstract The manipulation of magnetization and spin polarization using electrical currents represents a fundamental breakthrough in spintronics. It has formed the foundation for data storage and next-generation computing systems. Spin-transfer torque (STT) and spin-orbit torque (SOT) have emerged as prominent mechanisms in current-driven magnetization switching. However, these approaches typically require critical current densities in the range of 106 to 109 A⋅cm−2, resulting in significant heat generation during data writing processes. Herein, we report the discovery of an ultralow-vertical-current magnetization switching effect in a van der Waals ferromagnetic/ferroelectric heterostructure based on the modulation of the critical magnetic field (HC) using small vertical currents, with a critical current density as low as 1.81 A⋅cm−2 and an average effective field (Heff/JC) as high as 150.3 mT⋅A−1⋅cm2. This unique magnetization switching effect with ultralow-critical-vertical-current densities typically six to nine orders of magnitude lower than those of the STT and SOT provides a new transformative and viable pathway for developing next-generation spintronic and quantum technologies.
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Hao Wu, Li Yang, Gaojie Zhang, Wen Jin, Jie Yu, Bichen Xiao, Ahmed Annas, Wenfeng Zhang, Haixin Chang. Ultralow-Vertical-Current Magnetization Switching Effect in an All Van Der Waals 2D Heterostructure[J]. Chin. Phys. Lett., 2025, 42(2): 027502. DOI: 10.1088/0256-307X/42/2/027502
Hao Wu, Li Yang, Gaojie Zhang, Wen Jin, Jie Yu, Bichen Xiao, Ahmed Annas, Wenfeng Zhang, Haixin Chang. Ultralow-Vertical-Current Magnetization Switching Effect in an All Van Der Waals 2D Heterostructure[J]. Chin. Phys. Lett., 2025, 42(2): 027502. DOI: 10.1088/0256-307X/42/2/027502
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Hao Wu, Li Yang, Gaojie Zhang, Wen Jin, Jie Yu, Bichen Xiao, Ahmed Annas, Wenfeng Zhang, Haixin Chang. Ultralow-Vertical-Current Magnetization Switching Effect in an All Van Der Waals 2D Heterostructure[J]. Chin. Phys. Lett., 2025, 42(2): 027502. DOI: 10.1088/0256-307X/42/2/027502
Hao Wu, Li Yang, Gaojie Zhang, Wen Jin, Jie Yu, Bichen Xiao, Ahmed Annas, Wenfeng Zhang, Haixin Chang. Ultralow-Vertical-Current Magnetization Switching Effect in an All Van Der Waals 2D Heterostructure[J]. Chin. Phys. Lett., 2025, 42(2): 027502. DOI: 10.1088/0256-307X/42/2/027502
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