High-Mobility InGaAs HEMT Epitaxially Grown on Silicon

Abstract The direct growth of InGaAs high-electron-mobility transistors (HEMTs) on silicon facilitates their low-cost production on large-scale wafers. On a U-shaped patterned Si (001) substrate, we have achieved a high-quality In_0.36Ga_0.64As film with a threading dislocation density of ∼7 × 10⁶ cm⁻². The fabricated HEMT devices exhibit outstanding electrical characteristics, including a high Hall mobility of 4732 cm²/V·s and an effective mobility of 3305 cm²/V·s at room temperature. Through precise gate-recess processing and surface passivation, both depletion-mode and enhancement-mode devices were realized with transconductances reaching 500 mS/mm for a channel length of 100 nm. These results indicate their significant potential for the development of next-generation high-speed III–V electronic devices on silicon platforms that are compatible with CMOS technology.