High mobility InGaAs HEMT Epitaxially Grown on Silicon

The direct growth of InGaAs high electron mobility transistor (HEMT) on silicon has great potential for low-cost production on large wafer-scale. On U-shape patterned Si (001) substrate, we have achieved high-quality In_0.36Ga_0.64As film with threading dislocation density of ~ 7×10⁶ cm^-2. The fabricated HEMT devices exhibit outstanding electrical characteristics, including high Hall mobility of 4732 cm²/V·s and effective mobility of 3305 cm²/V·s at room temperature. Through precise gate recess processing and surface passivation, both depletion-mode and enhancement-mode devices were realized with transconductance reaching 500 mS/mm for 100 nm channel lengths. These results indicate significant potential for developing next-generation high-speed III-V electronic devices on silicon platforms compatible with CMOS technology.