Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer
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Shen Yan,
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Xiao-Tao Hu,
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Jun-Hui Die,
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Cai-Wei Wang,
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Wei Hu,
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Wen-Liang Wang,
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Zi-Guang Ma,
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Zhen Deng,
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Chun-Hua Du,
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Lu Wang,
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Hai-Qiang Jia,
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Wen-Xin Wang,
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Yang Jiang,
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Guoqiang Li,
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Hong Chen
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Abstract
We demonstrate that a low-temperature GaN insertion layer could significantly improve the surface morphology of non-polar a-plane GaN.The two key factors in improving the surface morphology of non-polar a-plane GaN are growth temperature and growth time of the GaN insertion layer. The root-mean-square roughness of a-plane GaN is reduced by 75% compared to the sample without the GaN insertion layer. Meanwhile, the GaN insertion layer is also beneficial for improving crystal quality. This work provides a simple and effective method to improve the surface morphology of non-polar a-plane GaN.
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Cite this article:
Shen Yan, Xiao-Tao Hu, Jun-Hui Die, Cai-Wei Wang, Wei Hu, Wen-Liang Wang, Zi-Guang Ma, Zhen Deng, Chun-Hua Du, Lu Wang, Hai-Qiang Jia, Wen-Xin Wang, Yang Jiang, Guoqiang Li, Hong Chen. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer[J].
Chin. Phys. Lett., 2020, 37(3): 038102.
DOI: 10.1088/0256-307X/37/3/038102
Shen Yan, Xiao-Tao Hu, Jun-Hui Die, Cai-Wei Wang, Wei Hu, Wen-Liang Wang, Zi-Guang Ma, Zhen Deng, Chun-Hua Du, Lu Wang, Hai-Qiang Jia, Wen-Xin Wang, Yang Jiang, Guoqiang Li, Hong Chen. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer[J]. Chin. Phys. Lett., 2020, 37(3): 038102. DOI: 10.1088/0256-307X/37/3/038102
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Shen Yan, Xiao-Tao Hu, Jun-Hui Die, Cai-Wei Wang, Wei Hu, Wen-Liang Wang, Zi-Guang Ma, Zhen Deng, Chun-Hua Du, Lu Wang, Hai-Qiang Jia, Wen-Xin Wang, Yang Jiang, Guoqiang Li, Hong Chen. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer[J]. Chin. Phys. Lett., 2020, 37(3): 038102. DOI: 10.1088/0256-307X/37/3/038102
Shen Yan, Xiao-Tao Hu, Jun-Hui Die, Cai-Wei Wang, Wei Hu, Wen-Liang Wang, Zi-Guang Ma, Zhen Deng, Chun-Hua Du, Lu Wang, Hai-Qiang Jia, Wen-Xin Wang, Yang Jiang, Guoqiang Li, Hong Chen. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer[J]. Chin. Phys. Lett., 2020, 37(3): 038102. DOI: 10.1088/0256-307X/37/3/038102
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