Probing Lattice Vibrations at SiO2/Si Surface and Interface with Nanometer Resolution
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Abstract
Recent advances in monochromatic aberration corrected electron microscopy make it possible to detect the lattice vibrations with both high-energy resolution and high spatial resolution. Here, we use sub-10 meV electron energy loss spectroscopy to investigate the local vibrational properties of the SiO2/Si surface and interface. The energy of the surface mode is thickness dependent, showing a blue shift as z-thickness (parallel to the fast electron beam) of SiO2 film increases, while the energy of the bulk mode and the interface mode keeps constant. The intensity of the surface mode is well-described by a Bessel function of the second kind. The mechanism of the observed spatially dependent vibrational behavior is discussed and compared with dielectric response theory analysis. Our nanometer scale measurements provide useful information on the bonding conditions at the surface and interface. -
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References
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