Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K
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Abstract
The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10–400 K. The variation of electrical parameters (threshold voltage, field effect mobility, sub-threshold swing, and leakage current) with decreasing temperature are then extracted and analyzed. Moreover, the dominated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.
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Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 098502. DOI: 10.1088/0256-307X/35/9/098502
Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 098502. DOI: 10.1088/0256-307X/35/9/098502
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Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 098502. DOI: 10.1088/0256-307X/35/9/098502
Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 098502. DOI: 10.1088/0256-307X/35/9/098502
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