Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application

After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature (\sim240^\circ\!C), larger crystallization activation energy (6.22 eV), and better data retention ability (189^\circ\!C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 mW and a good endurance of 3.0\times10^6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m\cdotK).