Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates
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Abstract
Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator (TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2 (TR-G2) is higher than that of generation 1 (TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon (HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase. -
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References
[1] Delatte P, Picun G, Demeus L, Simon P and Flandre D 2005 31st European Solid-State Circuits Conference Grenoble, France 12–16 September 2005 p 395[2] Tinella C, Richard O, Cathelin A, Reaute F, Majcherczak S, Blanchet F and Belot D 2006 Topical Meeting Silicon Monolithic Integrated Circuits RF Syst. San Diego CA, USA 18–20 January 2006 p 58[3] Wu Y, Gamble H S, Armstrong B M, Fusco V F and Stewart J 1991 IEEE Microwave Guided Wave Lett. 1 10 doi: 10.1109/75.80676[4] Schollhorn C, Zhao W, Morschbach M and Kasper E 2003 IEEE Trans. Electron Devices 50 740 doi: 10.1109/TED.2003.810466[5] Chan K T, Chin A, Lin Y D, Chang C Y, Zhu C X, Li M F, Kwong D L, McAlister S, Duh D S and Lin W J 2003 IEEE Microwave Wireless Compon. Lett. 13 487 doi: 10.1109/LMWC.2003.817146[6] Neve C R, Lederer D and Raskin J P 2007 Annu. Workshop IEEE/LEOS Benelux Chapter Brussels, Belgium 25 May 2007 p 251[7] Makioka S, Anda Y, Miyatsuji K and Ueda D 2001 IEEE Trans. Electron Devices 48 1510 doi: 10.1109/16.936499[8] Jansman A B M, van Beek J T M, van Delden M H W M, Kemmeren A L A M, den Dekker A and Widdershoven F P 33rd Conference on European Solid-State Device Research Estoril, Portugal 16–18 September 2003 p 3[9] Lederer D and Raskin J P 2005 Solid-State Electron. 49 491 doi: 10.1016/j.sse.2004.12.003[10] Gamble H S, Armstrong B M, Mitchell S J N, Wu Y, Fusco V F and Stewart J A C 1999 IEEE Microwave Guided Wave Lett. 9 395 doi: 10.1109/75.798027[11] Lederer D and Raskin J P 2005 IEEE Electron Device Lett. 26 805 doi: 10.1109/LED.2005.857730[12] Yang S, Hu Z, Buchanan N B, Fusco V F, Stewart J A C, Wu Y, Armstrong B M, Armstrong G A and Gamble H S 1998 IEEE Trans. Microwave Theory Tech. 46 623 doi: 10.1109/22.668674[13] Kamins T 1998 Polycrystalline Silicon For Integrated Circuit Applications Boston: Springer chap 1[14] https://www.soitec.com/[15] Desbonnets E and Didier C 2015 Microwave J. 58 64[16] Zhu L, Chang Y W, Gao N, Su X, Dong Y M, Fei L, Wei X and Wang X 2018 ECS J. Solid State Sci. Technol. 7 P35 doi: 10.1149/2.0061802jss[17] Zhu L, Liu S K, Allibert F, Desbonnets E, Radu I, Zhu X E and Lu Y M 2016 Int. Symp. VLSI Technol. Syst. Appl. Hsinchu, China 25–27 April 2016 p 1[18] Mazur R G and Dickey D H 1966 J. Electrochem. Soc. 113 255 doi: 10.1149/1.2423927[19] Neve C R, Alia K B, Malaquin C, Allibert F, Desbonnets E, Bertr, I, Van Den Daele W and Raskin J P 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Austin TX, USA 21–23 January 2013 p 15[20] Seto J Y W 1975 J. Appl. Phys. 46 5247 doi: 10.1063/1.321593[21] Fripp A L and Slack L H 1973 J. Electrochem. Soc. 120 145 doi: 10.1149/1.2403390[22] Neve C R, Roda C and Raskin J P 2012 IEEE Trans. Electron Devices 59 924 doi: 10.1109/TED.2012.2183598 -
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