An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel
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Abstract
We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A ∼45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the GaN-based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of ∼40 μA (line current density 2.3 mA/cm) at a collector bias VC=3 V, and a low reverse leakage of 3 nA at VC=−3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency microelectronics or nanoelectronics. -
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References
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