Global Statistical Study of Ionospheric Waves Based on COSMIC GPS Radio Occultation Data
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Abstract
Extracting and parameterizing ionospheric waves globally and statistically is a longstanding problem. Based on the multichannel maximum entropy method (MMEM) used for studying ionospheric waves by previous work, we calculate the parameters of ionospheric waves by applying the MMEM to numerously temporally approximate and spatially close global-positioning-system radio occultation total electron content profile triples provided by the unique clustered satellites flight between years 2006 and 2007 right after the constellation observing system for meteorology, ionosphere, and climate (COSMIC) mission launch. The results show that the amplitude of ionospheric waves increases at the low and high latitudes (0.15 TECU) and decreases in the mid-latitudes (0.05 TECU). The vertical wavelength of the ionospheric waves increases in the mid-latitudes (e.g., 50 km at altitudes of 200–250 km) and decreases at the low and high latitudes (e.g., 35 km at altitudes of 200–250 km). The horizontal wavelength shows a similar result (e.g., 1400 km in the mid-latitudes and 800 km at the low and high latitudes). -
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References
[1] Rice D D et al. 1988 Radio Sci. 23 919 doi: 10.1029/RS023i006p00919[2] Bristow W A, Greenwald R A and Samson J C 1994 J. Geophys. Res. 99 319 doi: 10.1029/93JA01470[3] Hernández M et al. 2006 J. Geophys. Res. 111 11[4] Galushko V G et al. 1998 Ann. Geophys. 16 821 doi: 10.1007/s00585-998-0821-3[5] Morf M et al. 1978 IEEE Trans. Geosci. Electron. 16 85 doi: 10.1109/TGE.1978.294569[6] Preusse P et al. 2002 J. Geophys. Res. 107 8178 doi: 10.1029/2001JD000699[7] Ern M 2004 J. Geophys. Res. 109 D20103 doi: 10.1029/2004JD004752[8] Ding F et al. 2011 J. Geophys. Res. 116 A09327 doi: 10.1029/2011JA016545[9] Zeng X Y et al. 2017 Sci. Chin. Earth Sci. 60 188 doi: 10.1007/s11430-016-0065-6[10] Schreiner W et al. 2007 Geophys. Res. Lett. 34 L04808 doi: 10.1029/2006GL027557[11] de la Torre A et al. 2014 J. Geophys. Res. 119 2046 doi: 10.1002/2013JA018870[12] Wright C J, Rivas M B and Gille J C 2011 Atmos. Meas. Tech. 4 1581 doi: 10.5194/amt-4-1581-2011[13] Alexander M J 2015 Geophys. Res. Lett. 42 6860 doi: 10.1002/2015GL065234[14] Schmidt T, Alexander P and de la Torre A 2016 J. Geophys. Res. 121 4443 doi: 10.1002/2015JD024135[15] Romero-Hernandez E et al. 2017 Adv. Space Res. 60 1838 doi: 10.1016/j.asr.2017.06.042[16] Faber A et al. 2013 Atmos. Meas. Tech. 6 3169 doi: 10.5194/amt-6-3169-2013[17] Vadas S L 2007 J. Geophys. Res. 112 305 doi: 10.1029/2006JA011845[18] Balthazor R L and Moffett R J 1997 Ann. Geophys. 15 1048 doi: 10.1007/s00585-997-1048-4[19] Kubota M et al. 2000 Geophys. Res. Lett. 27 4037 doi: 10.1029/2000GL011858[20] Tsugawa T 2004 J. Geophys. Res. 109 A06302 doi: 10.1029/2003JA010302[21] Zhang D H et al. 2002 Chin. J. Geophys. 45 469 doi: 10.1002/cjg2.260[22] Kubota M, Fukunishi H and Okano S 2001 Earth Planets Space 53 741 doi: 10.1186/BF03352402[23] Hocke K and Schlegel K 1996 Ann. Geophysicae 14 917[24] Kirchengast G, Hocke K and Schlegel K 1995 Radio Sci. 30 1551 doi: 10.1029/95RS02080 -
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