Ballistic Transport through a Strained Region on Monolayer Phosphorene
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Abstract
We investigate quantum transport of carriers through a strained region on monolayer phosphorene theoretically. The electron tunneling is forbidden when the incident angle exceeds a critical value. The critical angles for electrons tunneling through a strain region for different strengths and directions of the strains are different. Owing to the anisotropic effective masses, the conductance shows a strong anisotropic behavior. By tuning the Fermi energy and strain, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.
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Yi Ren, Fang Cheng. Ballistic Transport through a Strained Region on Monolayer Phosphorene[J]. Chin. Phys. Lett., 2017, 34(2): 027302. DOI: 10.1088/0256-307X/34/2/027302
Yi Ren, Fang Cheng. Ballistic Transport through a Strained Region on Monolayer Phosphorene[J]. Chin. Phys. Lett., 2017, 34(2): 027302. DOI: 10.1088/0256-307X/34/2/027302
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Yi Ren, Fang Cheng. Ballistic Transport through a Strained Region on Monolayer Phosphorene[J]. Chin. Phys. Lett., 2017, 34(2): 027302. DOI: 10.1088/0256-307X/34/2/027302
Yi Ren, Fang Cheng. Ballistic Transport through a Strained Region on Monolayer Phosphorene[J]. Chin. Phys. Lett., 2017, 34(2): 027302. DOI: 10.1088/0256-307X/34/2/027302
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