-
Abstract
Radiation-induced defect annealing in He^+ ion-implanted 4H-SiC via H^+ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He^+ ions with fluences ranging from 5.0\times10^15 cm^-2 to 2.0\times10^16 cm^-2 at room temperature. The post-implantation samples are irradiated by 260 keV H^+ ions at a fluence of 5.0\times10^15 cm^-2 at room temperature. The intensities of Raman lines decrease after He implantation, while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm^-1, which is assigned to 3C-SiC LO (\it \Gamma) phonon, is found in the He-implanted sample with a fluence of 5.0\times10^15 cm^-2 followed by H irradiation. However, for the He-implanted sample with a fluence of 2.0\times10^16 cm^-2 followed by H irradiation, no 3C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4H-SiC is discussed.
Article Text
-
-
-
About This Article
Cite this article:
Yi Han, Bing-Sheng Li, Zhi-Guang Wang, Jin-Xin Peng, Jian-Rong Sun, Kong-Fang Wei, Cun-Feng Yao, Ning Gao, Xing Gao, Li-Long Pang, Ya-Bin Zhu, Tie-Long Shen, Hai-Long Chang, Ming-Huan Cui, Peng Luo, Yan-Bin Sheng, Hong-Peng Zhang, Xue-Song Fang, Si-Xiang Zhao, Jin Jin, Yu-Xuan Huang, Chao Liu, Dong Wang, Wen-Hao He, Tian-Yu Deng, Peng-Fei Tai, Zhi-Wei Ma. H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC[J].
Chin. Phys. Lett., 2017, 34(1): 012801.
DOI: 10.1088/0256-307X/34/1/012801
Yi Han, Bing-Sheng Li, Zhi-Guang Wang, Jin-Xin Peng, Jian-Rong Sun, Kong-Fang Wei, Cun-Feng Yao, Ning Gao, Xing Gao, Li-Long Pang, Ya-Bin Zhu, Tie-Long Shen, Hai-Long Chang, Ming-Huan Cui, Peng Luo, Yan-Bin Sheng, Hong-Peng Zhang, Xue-Song Fang, Si-Xiang Zhao, Jin Jin, Yu-Xuan Huang, Chao Liu, Dong Wang, Wen-Hao He, Tian-Yu Deng, Peng-Fei Tai, Zhi-Wei Ma. H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC[J]. Chin. Phys. Lett., 2017, 34(1): 012801. DOI: 10.1088/0256-307X/34/1/012801
|
Yi Han, Bing-Sheng Li, Zhi-Guang Wang, Jin-Xin Peng, Jian-Rong Sun, Kong-Fang Wei, Cun-Feng Yao, Ning Gao, Xing Gao, Li-Long Pang, Ya-Bin Zhu, Tie-Long Shen, Hai-Long Chang, Ming-Huan Cui, Peng Luo, Yan-Bin Sheng, Hong-Peng Zhang, Xue-Song Fang, Si-Xiang Zhao, Jin Jin, Yu-Xuan Huang, Chao Liu, Dong Wang, Wen-Hao He, Tian-Yu Deng, Peng-Fei Tai, Zhi-Wei Ma. H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC[J]. Chin. Phys. Lett., 2017, 34(1): 012801. DOI: 10.1088/0256-307X/34/1/012801
Yi Han, Bing-Sheng Li, Zhi-Guang Wang, Jin-Xin Peng, Jian-Rong Sun, Kong-Fang Wei, Cun-Feng Yao, Ning Gao, Xing Gao, Li-Long Pang, Ya-Bin Zhu, Tie-Long Shen, Hai-Long Chang, Ming-Huan Cui, Peng Luo, Yan-Bin Sheng, Hong-Peng Zhang, Xue-Song Fang, Si-Xiang Zhao, Jin Jin, Yu-Xuan Huang, Chao Liu, Dong Wang, Wen-Hao He, Tian-Yu Deng, Peng-Fei Tai, Zhi-Wei Ma. H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC[J]. Chin. Phys. Lett., 2017, 34(1): 012801. DOI: 10.1088/0256-307X/34/1/012801
|