Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
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YAN Jun-Da,
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WANG Quan,
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WANG Xiao-Liang,
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XIAO Hong-Ling,
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JIANG Li-Juan,
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YIN Hai-Bo,
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FENG Chun,
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WANG Cui-Mei,
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QU Shen-Qi,
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GONG Jia-Min,
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ZHANG Bo,
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LI Bai-Quan,
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WANG Zhan-Guo,
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HOU Xun
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Abstract
Direct?current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS=32.0 mA/mm) for VGS swept from +0.7 V to -0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS–VGS scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
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Cite this article:
YAN Jun-Da, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, JIANG Li-Juan, YIN Hai-Bo, FENG Chun, WANG Cui-Mei, QU Shen-Qi, GONG Jia-Min, ZHANG Bo, LI Bai-Quan, WANG Zhan-Guo, HOU Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors[J].
Chin. Phys. Lett., 2015, 32(12): 127301.
DOI: 10.1088/0256-307X/32/12/127301
YAN Jun-Da, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, JIANG Li-Juan, YIN Hai-Bo, FENG Chun, WANG Cui-Mei, QU Shen-Qi, GONG Jia-Min, ZHANG Bo, LI Bai-Quan, WANG Zhan-Guo, HOU Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(12): 127301. DOI: 10.1088/0256-307X/32/12/127301
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YAN Jun-Da, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, JIANG Li-Juan, YIN Hai-Bo, FENG Chun, WANG Cui-Mei, QU Shen-Qi, GONG Jia-Min, ZHANG Bo, LI Bai-Quan, WANG Zhan-Guo, HOU Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(12): 127301. DOI: 10.1088/0256-307X/32/12/127301
YAN Jun-Da, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, JIANG Li-Juan, YIN Hai-Bo, FENG Chun, WANG Cui-Mei, QU Shen-Qi, GONG Jia-Min, ZHANG Bo, LI Bai-Quan, WANG Zhan-Guo, HOU Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(12): 127301. DOI: 10.1088/0256-307X/32/12/127301
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