Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In_0.53Ga_0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Ultra-thin-body (UTB) In_0.53Ga_0.47As-on-insulator (In_0.53Ga_0.47As-OI) structures with thicknesses of 8 and 15 nm are realized by transferring epitaxially grown In_0.53Ga_0.47As layers to silicon substrates with 15-nm-thick Al₂O₃ as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) are fabricated by using these In_0.53Ga_0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the In_0.53Ga_0.47As-OI nMOSFETs. It is confirmed that the In_0.53Ga_0.47As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCI stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In_0.53Ga_0.47As-OI nMOSFETs may be due to the slow border traps.