Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors
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Abstract
The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors (OTFTs) is studied. The effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length (source and drain electrodes' length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm. With the help of the contact length related contact resistance, contact-size-dependent fT of bottom-contact OTFTs is studied and it is found that fT increases with the decrease of the contact length in bottom-contact OTFTs.
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SUN Jing, WANG Hong, WANG Zhan, WU Shi-Wei, MA Xiao-Hua. Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors[J]. Chin. Phys. Lett., 2015, 32(10): 107304. DOI: 10.1088/0256-307X/32/10/107304
SUN Jing, WANG Hong, WANG Zhan, WU Shi-Wei, MA Xiao-Hua. Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors[J]. Chin. Phys. Lett., 2015, 32(10): 107304. DOI: 10.1088/0256-307X/32/10/107304
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SUN Jing, WANG Hong, WANG Zhan, WU Shi-Wei, MA Xiao-Hua. Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors[J]. Chin. Phys. Lett., 2015, 32(10): 107304. DOI: 10.1088/0256-307X/32/10/107304
SUN Jing, WANG Hong, WANG Zhan, WU Shi-Wei, MA Xiao-Hua. Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors[J]. Chin. Phys. Lett., 2015, 32(10): 107304. DOI: 10.1088/0256-307X/32/10/107304
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