Growth of a-Plane InN Film and Its THz Emission

We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a GaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm²/V?s with a residual electron concentration of 5.7×10¹⁸ cm^?3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.