The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer
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LU Jian-Xin,
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OU Xin,
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LAN Xue-Xin,
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CAO Zheng-Yi,
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LIU Xiao-Jie,
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LU Wei,
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GONG Chang-Jie,
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XU Bo,
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LI Ai-Dong,
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XIA Yi-Dong,
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YIN Jiang,
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LIU Zhi-Guo
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Abstract
A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and rf-magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2+ ions around the peak of Cu1+ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.
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Cite this article:
LU Jian-Xin, OU Xin, LAN Xue-Xin, CAO Zheng-Yi, LIU Xiao-Jie, LU Wei, GONG Chang-Jie, XU Bo, LI Ai-Dong, XIA Yi-Dong, YIN Jiang, LIU Zhi-Guo. The Distinguished Charge-Trapping Capability of the Memory Device with Al
2O
3-Cu
2O Composite as the Charge Storage Layer[J].
Chin. Phys. Lett., 2014, 31(2): 028503.
DOI: 10.1088/0256-307X/31/2/028503
LU Jian-Xin, OU Xin, LAN Xue-Xin, CAO Zheng-Yi, LIU Xiao-Jie, LU Wei, GONG Chang-Jie, XU Bo, LI Ai-Dong, XIA Yi-Dong, YIN Jiang, LIU Zhi-Guo. The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer[J]. Chin. Phys. Lett., 2014, 31(2): 028503. DOI: 10.1088/0256-307X/31/2/028503
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LU Jian-Xin, OU Xin, LAN Xue-Xin, CAO Zheng-Yi, LIU Xiao-Jie, LU Wei, GONG Chang-Jie, XU Bo, LI Ai-Dong, XIA Yi-Dong, YIN Jiang, LIU Zhi-Guo. The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer[J]. Chin. Phys. Lett., 2014, 31(2): 028503. DOI: 10.1088/0256-307X/31/2/028503
LU Jian-Xin, OU Xin, LAN Xue-Xin, CAO Zheng-Yi, LIU Xiao-Jie, LU Wei, GONG Chang-Jie, XU Bo, LI Ai-Dong, XIA Yi-Dong, YIN Jiang, LIU Zhi-Guo. The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer[J]. Chin. Phys. Lett., 2014, 31(2): 028503. DOI: 10.1088/0256-307X/31/2/028503
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