The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop I_D hysteresis, which is defined as the difference between I_D versus V_D forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in I_D hysteresis. The experimental results show that I_D hysteresis declined as the STI mechanical stress increases. We also elaborate on the impact of STI mechanical stress on the I_D hysteresis of PD SOI n-type MOSFETs.