A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island

A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (R_{on, sp}) is presented. It features an oxide-filled trench and a non-depleted embedded p-type island (p-SOI). The oxide trench folds the drift region into a U-shape, resulting in a reduction in cell pitch and R_{on, sp}. The non-depleted p-island is employed to further reduce R_{on, sp} by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage (BV). The simulation results show that the p-SOI decreases the R_{on, sp} to 10.2 mΩ?cm² from 17.4 mΩ?cm² of the conventional SOI MOSFET at the same BV.