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Room-Temperature d0 Ferromagnetism in Nitrogen-Doped In2O3 Films

  • Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low-Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072

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  • Received Date: May 05, 2013
  • Revised Date: June 24, 2013
  • Published Date: June 30, 2013
    Abstract
  • N-doped In2O3 films were deposited on fused quartz substrates by radio-frequency magnetron sputtering with different N2 flux. X-ray diffraction patterns, x-ray photoelectron spectroscopy and the optical transmittance spectra indicate that nitrogen has incorporated into the In2O3 lattice. Room-temperature d0 ferromagnetism is observed in all the films. The saturation magnetization increases from 0.73 to 3.5 emu/cm3 when the N2 flux varies from 0 to 10 sccm. The concordant results in structural, compositional, optical and magnetic properties suggest that this d0 ferromagnetism is associated with the N incorporation and may be mediated by the long-range p–p interaction between the N 2p states.
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    • References (27)
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