A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems
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Abstract
Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work. In this study, we propose a novel etching method called the polymer-rich re-deposition technique, used particularly for improving the etched sidewall where the re-deposition is able to accumulate. This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product. The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution. The traditional, additional cleaning process step used to remove the re-deposition material is not required anymore, so this reduces the overall processing time. The technique is demonstrated on an Al2O3-TiC substrate by C4F8 plasma, and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms, suggesting that it is a C–F polymer re-deposition.
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Cite this article:
A. Limcharoen, C. Pakpum, P. Limsuwan. A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems[J]. Chin. Phys. Lett., 2013, 30(7): 075202. DOI: 10.1088/0256-307X/30/7/075202
A. Limcharoen, C. Pakpum, P. Limsuwan. A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems[J]. Chin. Phys. Lett., 2013, 30(7): 075202. DOI: 10.1088/0256-307X/30/7/075202
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A. Limcharoen, C. Pakpum, P. Limsuwan. A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems[J]. Chin. Phys. Lett., 2013, 30(7): 075202. DOI: 10.1088/0256-307X/30/7/075202
A. Limcharoen, C. Pakpum, P. Limsuwan. A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems[J]. Chin. Phys. Lett., 2013, 30(7): 075202. DOI: 10.1088/0256-307X/30/7/075202
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