Fabrication of P-Type ZnO:N Film by Radio-Frequency Magnetron Sputtering for Extremely Thin Absorber Solar Cell Applications

We successfully fabricate p-type ZnO:N films by using rf magnetron sputtering and in situ annealing in O₂ atmosphere. These p-type ZnO:N films can be used as p-type window materials for extremely thin absorber (ETA) solar cells composed of quartz glass/p-ZnO:N/i-ZnO/CdSe/i-ZnO/n-ZnO:Al. The short-circuit photocurrent density, open circuit voltage, fill factor and conversion efficiency of the ETA solar cells can be determined to be 8.549 mA/cm², 0.702 V, 0.437 and 2.623%, respectively, through measurements of photovoltaic properties under illumination with a 100 mW/cm² at air-mass (AM) 1.5.