Experimental Research on Carrier Redistribution in InAs/GaAs Quantum Dots

In order to investigate the carrier redistribution mechanisms in InAs/GaAs self-assembled quantum dots, the photoluminescent energy peak shift is studied with increasing excitation power. Unusually for samples of relatively low density, it is shown that the energy peak position could recover slowly after a fast redshift, associated with the increasing excitation power. A theoretical model is presented, which involves the Auger effect assisting carrier recapture as important mechanisms during the relaxation process.