Domain Rotation Simulation of the Magnetostriction Jump Effect of <110> Oriented TbDyFe Crystals
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Abstract
The compressive pre-stress induced magnetostriction jump effect of an 110 oriented TbDyFe crystal is simulated by tracking the initial redistribution of magnetic domains and their volume fraction evolutions under external magnetic fields. Through searching for the free energy minima within both (110) and (110) planes, it is found that the axial compressive pre−stress not only switches magnetizations of the 35° domains toward the perpendicular plane, but also switches magnetizations of the 90° domains approaching the 110 direction. When increasing the stress magnitude, the volume fraction for 35° domains decreases and the one for the 110 domain increases rapidly. However, the volume fraction for the four 90° domains within the perpendicular plane first increases to a maximum under a certain stress magnitude and further decreases. The stress-induced anisotropy thereafter changes the volume fraction evolutions during the magnetization process, which explains well the magnetostriction jump effect.
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ZHANG Chang-Sheng, MA Tian-Yu, PAN Xing-Wen, YAN Mi. Domain Rotation Simulation of the Magnetostriction Jump Effect of Oriented TbDyFe Crystals[J]. Chin. Phys. Lett., 2012, 29(2): 027501. DOI: 10.1088/0256-307X/29/2/027501
ZHANG Chang-Sheng, MA Tian-Yu, PAN Xing-Wen, YAN Mi. Domain Rotation Simulation of the Magnetostriction Jump Effect of Oriented TbDyFe Crystals[J]. Chin. Phys. Lett., 2012, 29(2): 027501. DOI: 10.1088/0256-307X/29/2/027501
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ZHANG Chang-Sheng, MA Tian-Yu, PAN Xing-Wen, YAN Mi. Domain Rotation Simulation of the Magnetostriction Jump Effect of Oriented TbDyFe Crystals[J]. Chin. Phys. Lett., 2012, 29(2): 027501. DOI: 10.1088/0256-307X/29/2/027501
ZHANG Chang-Sheng, MA Tian-Yu, PAN Xing-Wen, YAN Mi. Domain Rotation Simulation of the Magnetostriction Jump Effect of Oriented TbDyFe Crystals[J]. Chin. Phys. Lett., 2012, 29(2): 027501. DOI: 10.1088/0256-307X/29/2/027501
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