Photo-Induced Spin Dynamics in Nanoelectronic Devices
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Abstract
The present research is devoted to the investigation of electron spin transmission through a nanoelectronic device. This device is modeled as nonmagnetic semiconductor quantum dot coupled to two diluted magnetic semiconductor leads. The spin transport characteristics through such a device are investigated under the effect of an ac-field of a wide range of frequencies. The present result shows a periodic oscillation of the conductance for both the cases of parallel and antiparallel spin alignment. These oscillations are due to Fano-resonance. Results for spin polarization and giant magneto-resistance show the coherency property. The present research might be useful for developing single spin-based quantum bits (qubits) required for quantum information processing and quantum spin-telecommunication.
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Cite this article:
Mina D. Asham, Walid A. Zein, Adel H. Phillips. Photo-Induced Spin Dynamics in Nanoelectronic Devices[J]. Chin. Phys. Lett., 2012, 29(10): 108502. DOI: 10.1088/0256-307X/29/10/108502
Mina D. Asham, Walid A. Zein, Adel H. Phillips. Photo-Induced Spin Dynamics in Nanoelectronic Devices[J]. Chin. Phys. Lett., 2012, 29(10): 108502. DOI: 10.1088/0256-307X/29/10/108502
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Mina D. Asham, Walid A. Zein, Adel H. Phillips. Photo-Induced Spin Dynamics in Nanoelectronic Devices[J]. Chin. Phys. Lett., 2012, 29(10): 108502. DOI: 10.1088/0256-307X/29/10/108502
Mina D. Asham, Walid A. Zein, Adel H. Phillips. Photo-Induced Spin Dynamics in Nanoelectronic Devices[J]. Chin. Phys. Lett., 2012, 29(10): 108502. DOI: 10.1088/0256-307X/29/10/108502
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