Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a−Plane and Semipolar (1122) Ga
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Abstract
Nonpolar (1120) and semipolar (1122) GaN are grown on r−plane and m−plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (1122) and nonpolar a−plane GaN template is 3×105 cm−1 and 8×105 cm−1, respectively. The semipolar (1122) GaN shows an arrowhead−like structure, and the nonpolar a−plane GaN has a much smoother morphology with a streak along the c−axis. Both nonpolar (1120) and semipolar (1122) GaN have very strong BSF luminescence due to the optically active character of the BSFs. -
References
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